The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

https://doi.org/10.1143/JJAP.42.L625

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Geometrical influence on repeated impact durability of alumina insulation film coated by plasma spraying method

Kanari, Moriyasu*; Abe, Tetsuya; Tanzawa, Sadamitsu; Shimizu, Katsusuke*; *; *

JAERI-Research 99-012, 21 Pages, 1999/02

JAERI-Research-99-012.pdf:2.26MB

no abstracts in English

Electric Breakdown Property of Halon Gas

JAERI-M 83-023, 12 Pages, 1983/02

JAERI-M-83-023.pdf:0.41MB

no abstracts in English

Charge accumulation in solid polymer under X-ray irradiation

; ; ; ; *

EIM-80-93, p.11 - 20, 1980/00

no abstracts in English